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1

Monte Carlo Simulation of Photoelectric Characteristics of Mercury-Cadmium-Tellurium- Based Infrared Focal-Plane-Array Detectors

Polovinkin, Vladimir G., Stuchinsky, Victor A., Vishnyakov, Aleksey V., Lee, Irlam I.

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.23 MB

english, 2018

2

Impact of high-conductivity n-type anti-debiasing layer on the photoresponse of “leaking” and “non-leaking” FPA elements in photovoltaic MCT-based n-on-p infrared FPA detectors

Vasiliev, V.V., Vishnyakov, A.V., Dvoretsky, S.A., Predein, A.V., Sabinina, I.V., Sidorov, Yu.G., Stuchinsky, V.A.

Journal:

Infrared Physics & Technology

Year:

2017

Language:

english

File:

PDF, 623 KB

english, 2017

3

Analysis of charge-carrier diffusion in the photosensing films of HgCdTe infrared focal plane array photodetectors

Vishnyakov, A. V., Stuchinsky, V. A., Brunev, D. V., Zverev, A. V., Dvoretsky, S. A.

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 937 KB

english, 2015

4

[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Temperature-Dependent PL Intensity in FLA-Synthesized and Hydrogen-Modified Silica Layers with Silicon Nanocrystals

Volodin, Vladimir, Stuchinsky, Victor, Cherkova, Svetlana, Kachurin, Grigory, Yankov, Rossen

Year:

2009

Language:

english

File:

PDF, 279 KB

english, 2009

5

Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

Vishnyakov, A. V., Stuchinsky, V. A., Brunev, D. V., Zverev, A. V., Dvoretsky, S. A.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 424 KB

english, 2014

6

Divacancy Induced Improvement for Stabilization of Silicon Conductivity versus Temperature

Kamaev, G.N., Efremov, M.D., Stuchinsky, V.A., Mihailov, B.I., Kurkin, S.G.

Journal:

Solid State Phenomena

Year:

2007

Language:

english

File:

PDF, 236 KB

english, 2007

7

Defect Formation and Impurity Redistribution Due to the Electric Field and Elastic Stresses in Interface Regions

Bolotov, V.V., Emeksuzyan, V.M., Stuchinski, V.A.

Journal:

Solid State Phenomena

Year:

1989

Language:

english

File:

PDF, 716 KB

english, 1989

8

Simulation of the Spatial Distribution of the Local Quantum Efficiency and Photoelectric Characteristics of Photodiode-Based Infrared Focal Plane Arrays

Polovinkin, V. G., Stuchinsky, V. A., Vishnyakov, A. V., Lee, I. I.

Journal:

Optoelectronics, Instrumentation and Data Processing

Year:

2018

File:

PDF, 461 KB

2018

9

Monte Carlo Simulation of Charge Carrier Diffusion for Determining the Spatial Resolution of Infrared CadmiumâMercuryâTellurium Detectors

Vishnyakov, A. V., Vasiliev, V. V., Sabinina, I. V., Sidorov, G. Yu., Stuchinsky, V. A.

Journal:

Optoelectronics, Instrumentation and Data Processing

Year:

2019

File:

PDF, 186 KB

2019

10

SPIE Proceedings [SPIE International Conference on Micro-and Nano-Electronics 2012 - Zvenlgorod, Russian Federation (Monday 1 October 2012)] International Conference Micro- and Nano-Electronics 2012 - Capacitance properties of MOS capacitors with oxide-hosted Si nanoparticles

Stuchinsky, V. A., Kamaev, G. N., Efremov, M. D., Arzhannikova, S. A., Orlikovsky, Alexander A.

Year:

2013

Language:

english

File:

PDF, 340 KB

english, 2013

11

SPIE Proceedings [SPIE SPIE Optical Engineering + Applications - San Diego, California, United States (Sunday 17 August 2014)] Infrared Sensors, Devices, and Applications IV - Analysis of local charge-carrier diffusion length values in the photosensing film of photovoltaic HgCdTe FPA photodetectors

LeVan, Paul D., Sood, Ashok K., Wijewarnasuriya, Priyalal, D'Souza, Arvind I., Vishnyakov, Alexei V., Stuchinsky, Victor A., Brunev, Dmitry V., Zverev, Alexei V., Dvoretsky, Sergey A.

Year:

2014

Language:

english

File:

PDF, 541 KB

english, 2014

12

10.1088/0953-8984/7/39/006

V. A. Stuchinsky, V. V. Bolotov

Year:

1995

Language:

english

File:

PDF, 387 KB

english, 1995

13

Effects of generation/recombination processes and leakage current through interfacial “punctures” on electrical characterization of unipolar directly bonded semiconductor structures

V.A. Stuchinsky

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 348 KB

english, 2004

14

A model to describe the humplike feature observed in the accumulation branch of capacitance-voltage characteristics of MOS capacitors with oxide-hosted silicon nanoparticles

V. A. Stuchinsky, G. N. Kamaev, M. D. Efremov, S. A. Arzhannikova

Journal:

Technical Physics Letters

Year:

2012

Language:

english

File:

PDF, 178 KB

english, 2012

15

Accumulation of Radiation Defects in Oxygen-Rich n-Type Silicon Heat-Treated at Temperatures from 600 to 1000 °C

V. V. Bolotov, A. V. Kakpov, V. A. Stuchinsky, K. Schmalz

Journal:

physica status solidi (a)

Year:

1986

Language:

english

File:

PDF, 353 KB

english, 1986

16

[ECS 213th ECS Meeting - Phoenix, AZ (May 18 - May 23, 2008)] ECS Transactions - Exciton Lifetime in Sio2 Layers with Embedded Silicon Nanocrystals as a Function of the "Dark" Fraction Of Nanocrystals in the System

Stuchinsky, Victor A.

Year:

2008

Language:

english

File:

PDF, 266 KB

english, 2008

17

New methods for electrical characterization of unipolar directly bonded Si/Si structures permitting quantitative evaluation of their lateral non-uniformity

V.A. Stuchinsky, G.N. Kamaev

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 100 KB

english, 2001

18

Size effects in percolation of small regions on planar and cylindrical surfaces

V. A. Stuchinsky

Journal:

Technical Physics Letters

Year:

2013

Language:

english

File:

PDF, 174 KB

english, 2013

19

Influence of the Step Composition Profile on the Formation of Inversion in CadmiumâMercuryâTellurium Films

Stuchinsky, V. A., Vishnyakov, A. V., Sidorov, G. Yu.

Journal:

Optoelectronics, Instrumentation and Data Processing

Year:

2019

Language:

english

File:

PDF, 202 KB

english, 2019

20

Improved characterization methods for unipolar directly bonded semiconductor junctions

V.A. Stuchinsky, G.N. Kamaev, K.Yu. Khoroshilov

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 355 KB

english, 2005

21

SPIE Proceedings [SPIE SPIE Proceedings - (Sunday 12 February 2012)] - Stable silicon resistors at 20-160°C due to divacancy involving high purity neutron doped Si

Kamaev, Gennady N., Efremov, Mikhail D., Stuchinsky, Victor A., Mikhailov, Boris I., Kurkin, Stepan G., Valiev, Kamil A., Orlikovsky, Alexander A.

Year:

2012

Language:

english

File:

PDF, 377 KB

english, 2012

22

[ECS 216th ECS Meeting - Vienna, Austria (October 4 - October 9, 2009)] ECS Transactions - Temperature Dependence of the Photoluminescence Intensity in Si

Volodin, Vladimir, Stuchinsky, Victor A., Korchagina, Taisiya, Popov, Aleksandr, Vergnat, Michel

Year:

2009

Language:

english

File:

PDF, 447 KB

english, 2009

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